PMA6-xx-10W+ Series MMIC High-Power Amplifier

In a footprint of just 6×6 mm, this GaAs MMIC power amplifier packs approximately 8 W of saturated output power, 30 dB-class high gain, and high efficiency exceeding 30%. Internal matching dramatically reduces design effort, delivering both high-density mounting and mass-production suitability.

・Approximately 8 W (+39 dBm typ) high output power (PSAT) ― Covers the final stage of the system on a single chip
・High gain of up to 30.3 dB ― Reduces the number of amplification stages and simplifies system configuration
・Excellent PAE of up to 32.6% ― High-efficiency operation curbs power consumption and heat generation
・High OIP3 (up to +47.1 dBm typ) and high-linearity design ― Maintains low distortion even with high-PAR (high peak-to-average power ratio) modulated signals
・Inputs and outputs fully matched to 50 Ω ― No external matching circuit required, enabling seamless and highly reproducible mounting
・Robust and stable characteristics thanks to the GaAs MMIC process
・Operates on a +8 V drain power supply, operating temperature range -40°C to +95°C
・Covers the main C-band to X-band frequencies with three models (5.6–7.1 / 7.1–8.5 / 10.0–11.7 GHz)
・Industry-standard 6×6 mm 28-lead QFN package; low inductance; excellent thermal conductivity and high-density design; supports chip mounting
・Main applications: backhaul radio systems, radar systems, consumer communication equipment